Hot on the heels of Samsung and its “Flashbolt” HBM2E memory, SK
Hynix has now become the second DRAM manufacturer to announce its
next-gen HBM2E that boast 3.6Gbps (vs 3.2Gbps of Samsung’s
Flashbolt) speed performance per pin with 1,024 data I/Os.
Source: FS – All Tech News
SK Hynix develops the world's fastest high-bandwidth DRAM based on HBM2E